| PART |
Description |
Maker |
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| IRFP048N-202 |
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
|
The Connor-Winfield, Corp.
|
| FQP90N08J69Z |
71 A, 80 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SK3882-01 |
100 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
|
FUJI ELECTRIC CO LTD
|
| ITF86174SQT |
9A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| CD00297243 STL40DN3LLH5 |
Dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 double island package
|
ST Microelectronics
STMicroelectronics
|
| IXTT120N15P IXTQ120N15P |
120 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
N-Channel Enhancement Mode
|
IXYS CORP
IXYS Corporation
|
| HUF75333S3S HUF75333G3 HUF75333P3 HUF75333S3 HUF75 |
55V N-Channel UltraFET Power MOSFET
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| STS7PF30L |
P-CHANNEL 30V - 0.016 OHM - 7A SO-8 STRIPFET II POWER MOSFET
P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET⑩ II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CW1XCT52A0.015OHMJ CW1XCT52A0.024OHMJ CW1XCT52A0.0 |
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 0.604 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
| PHB55N03LT PHD55N03LT PHP55N03LT PHB55N03 |
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
|
